SiC substrate

wehewehe pōkole:

ʻO ka maʻalahi kiʻekiʻe
2. Kiekie lattice hoʻolikelike (MCT)
3.Low dislocation density
4.High infrared transmittance

Huahana Huahana

wehewehe

ʻO Silicon carbide (SiC) kahi hui binary o ka Pūʻulu IV-IV, ʻo ia wale nō ka mea paʻa paʻa paʻa i loko o ka Pūʻulu IV o ka Papa Kūikawā, He semiconductor koʻikoʻi.Loaʻa iā SiC nā waiwai wela, mechanical, chemical a me nā uila, e lilo ia i mea maikaʻi loa no ka hana ʻana i nā mea uila kiʻekiʻe, kiʻekiʻe-frequency, a me ka mana kiʻekiʻe, hiki ke hoʻohana ʻia ka SiC ma ke ʻano he substrate. no nā diodes polū polū ma muli o GaN.I kēia manawa, ʻo 4H-SiC nā huahana nui i ka mākeke, a ua hoʻokaʻawale ʻia ke ʻano conductivity i ke ʻano semi-insulating a me ke ʻano N.

Waiwai

'ikamu	2 iniha 4H N-ʻano
Anawaena	2 iniha (50.8mm)
mānoanoa	350+/-25um
Kūlana	mai axis 4.0˚ a hiki i <1120> ± 0.5˚
Kūlana Pāha mua	<1-100> ± 5°
Pāpā lua Kūlana	90.0˚ CW mai ka Papa Haʻahaʻa ± 5.0˚, ʻO ke alo i luna
Ka lōʻihi pālahalaha	16 ± 2.0
Ka lōʻihi pālahalaha lua	8 ± 2.0
Papa	Papa hana (P)	Papa noiʻi (R)	Papa Dummy (D)
Kū'ē	0.015~0.028 Ω·cm	< 0.1 Ω·cm	< 0.1 Ω·cm
Micropipe Density	≤ 1 micropipes/cm²	≤ 1 0micropipes/ knm²	≤ 30 micropipes/ knm²
ʻAole ʻili	ʻO ka maka CMP Ra <0.5nm, C Maka Ra <1 nm		N/A, ʻāpana hiki ke hoʻohana ʻia > 75%
TTV	< 8 um	< 10um	< 15 um
Kakaka	< ± 8 um	< ±10um	< ±15um
Warp	< 15 um	< 20 um	< 25 um
māwae	ʻAʻohe	ʻO ka lōʻihi huila ≤ 3 mm ma ka lihi	Ka lōʻihi huila ≤10mm, hoʻokahi lōʻihi ≤ 2mm
Nā ʻōpala	≤ 3 ʻōpala, hui pū lōʻihi <1* anawaena	≤ 5 ʻōpala, hui pū lōʻihi <2* anawaena	≤ 10 ʻōpala, hui pū lōʻihi <5* anawaena
Papa Hex	ka nui o 6 papa, <100um	ka nui o 12 mau papa, <300um	N/A, ʻāpana hiki ke hoʻohana ʻia > 75%
Nā ʻāpana Polytype	ʻAʻohe	ʻĀpana hui ≤ 5%	ʻĀpana hui ≤ 10%
Hoʻohaumia	ʻAʻohe